Method of manufacturing semiconductor device

ABSTRACT

Provided is a method of manufacturing a semiconductor device including: providing a substrate having a memory cell region and a logic region; forming a plurality of stack structures on the substrate in the memory cell region; forming a polysilicon layer to cover the plurality of stack structures and the substrate in the logic region; performing a chemical-mechanical polishing (CMP) process on the polysilicon layer to expose top surfaces of the plurality of stack structures; and after performing the CMP process, patterning the polysilicon layer to form an erase gate between adjacent two stack structures and form a logic gate on the substrate in the logic region, wherein the logic gate has a topmost top surface lower than a topmost top surface of the erase gate.

CROSS-REFERENCE TO RELATED APPLICATION

This is a continuation application of and claims the priority benefit ofU.S. application Ser. No. 17/068,769, filed on Oct. 12, 2020, nowallowed. The U.S. application Ser. No. 17/068,769 is a divisionalapplication of and claims the priority benefit of U.S. application Ser.No. 16/180,026, filed on Nov. 5, 2018, now U.S. Pat. No. 10,825,914,issued on Nov. 3, 2020, and claims the priority benefit of U.S.provisional application Ser. No. 62/584,918, filed on Nov. 13, 2017. Theentirety of each of the above-mentioned patent applications is herebyincorporated by reference herein and made a part of this specification.

BACKGROUND

As the semiconductor industry has progressed into nanometer technologyprocess nodes in pursuit of higher device density, higher performance,and lower costs, there have been challenges in reducing topographyvariations and suppressing an increase in the number of lithographyoperations.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIGS. 1A-1L are cross sectional views illustrating a sequential processfor manufacturing a semiconductor device including a memory according toone embodiment of the present disclosure.

FIG. 2 is a top view of a semiconductor device including a memoryaccording to another embodiment of the present disclosure.

DETAILED DESCRIPTION

It is to be understood that the following disclosure provides manydifferent embodiments, or examples, for implementing different featuresof the disclosure. Specific embodiments or examples of components andarrangements are described below to simplify the present disclosure.These are, of course, merely examples and are not intended to belimiting. For example, dimensions of elements are not limited to thedisclosed range or values, but may depend upon process conditions and/ordesired properties of the device. Moreover, the formation of a firstfeature over or on a second feature in the description that follows mayinclude embodiments in which the first and second features are formed indirect contact, and may also include embodiments in which additionalfeatures may be formed interposing the first and second features, suchthat the first and second features may not be in direct contact. Variousfeatures may be arbitrarily drawn in different scales for simplicity andclarity.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The device may be otherwise oriented (rotated 90 degrees orat other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly. In addition, the term“made of” may mean either “comprising” or “consisting of.”

In the present embodiment, a semiconductor device includes non-volatilememory (NVM) cells and peripheral circuits such as logic circuits. Theperipheral circuits may also include dynamic random access memories(DRAMs), static random access memories (SRAMs), or a combinationthereof. The NVM cells generally require a stack structure in whichplural layers, such as polysilicon layers, are stacked, while theperipheral logic circuits generally include field effect transistors(FETs) having a single polysilicon layer. Because of the structuredifferences, when, for example, a conductive layer over the NVM cellsand the peripheral logic circuits is patterned to form word lines andgate electrodes respectively, there is a height difference in theconductive layer between an NVM cell region and a peripheral logiccircuit region. Such a height difference may affect the performance offurther etching process on the conductive layer.

FIGS. 1A-1L are cross sectional views illustrating a sequential processfor manufacturing a semiconductor device including a memory according toone embodiment of the present disclosure. It is understood thatadditional operations can be provided before, during, and afterprocesses shown by FIGS. 1A-1L, and some of the operations describedbelow can be replaced or eliminated, for additional embodiments of themethod.

Referring to FIG. 1A, a substrate 100 is provided. In some embodiments,the substrate 100 is, for example, a p-type silicon substrate with adopant concentration in a range from about 1×10¹⁵ cm⁻³ to about 1×10¹⁸cm⁻³. In other embodiments, the substrate is an n-type silicon substratewith a dopant concentration in a range from about 1×10¹⁵ cm⁻³ to about1×10¹⁸ cm⁻³. Alternatively, the substrate may comprise anotherelementary semiconductor, such as germanium; a compound semiconductorincluding Group IV-IV compound semiconductors such as SiC and SiGe,Group III-V compound semiconductors such as GaAs, GaP, GaN, InP, InAs,InSb, GaAsP, AlGaN, AlInAs, AlGaAs, GaInAs, GaInP, and/or GaInAsP; orcombinations thereof. In one embodiment, the substrate is a siliconlayer of an SOI (silicon-on-insulator) substrate.

Referring to FIG. 1A, a plurality of isolation structures 101 are formedin the substrate 100. The isolation structures 101 is shallow trenchisolations (STI), for example. In some embodiments, the isolationstructures 101 may be formed by the following steps. A mask layer (notshown) is formed on the substrate 100, and the mask layer is patternedby lithography and etching operations. Then, by using the patterned masklayer as an etching mask, the substrate 100 is etched to form trenches.A depth of the trenches is in a range from about 250 nm to about 350 nmin some embodiments. The trenches are filled with an insulating ordielectric material such as silicon oxide, and then, a planarizationoperation, such as CMP or an etch-back process, is performed so as toremove an upper part of the insulating material layer, thereby formingthe isolation structures 101.

The region of the substrate 100 is not etched and surrounded orseparated by the isolation structures 101 in top view is referred asactive regions. As shown in FIG. 1A, in some embodiments, the substrate100 includes a dummy region DR, a logic region LR, and a memory cellregion MR. The dummy region DR, the logic region LR, and the memory cellregion MR may be separated by isolation structures 101. In someembodiments, the memory cell region MR includes non-volatile memory(NVM) cells such as flash memory cells, and the logic region LR mayinclude logic circuits (e.g., transistors), volatile memory cells (e.g.,DRAMs, SRAMs or the like), or a combination thereof. The dummy region DRis basically referred as other regions out of the memory cell region MRand the logic region LR. In some alternative embodiments, the number andthe arrangement of the dummy region DR, the logic region LR, and thememory cell region MR may be adjusted based on the design and therequirements of the products.

After the isolation structures 101 are formed, a first dielectric layer102, a first conductive layer 104, a second dielectric layer 106, asecond conductive layer 108, and a cap layer 110 are sequentially formedover the substrate 100. In some embodiments, in the memory cell regionMR, the first dielectric layer 102 is to be used as a tunnel dielectriclayer of the memory cell; the first conductive layer 104 is to be usedas a floating gate of the memory cell; and the second conductive layer108 is to be used as a control gate of the memory cell.

The first dielectric layer 102 utilized as a tunnel oxide layer formemory cells is made of silicon oxide in some embodiments. The thicknessof the first dielectric layer 102 is in a range from about 1 nm to about50 nm in some embodiments. The first dielectric layer 102 can be formedby thermal oxidation or chemical vapor deposition (CVD).

The first conductive layer 104 is polysilicon in some embodiments. Inother embodiments the first conductive layer is any suitable metal ormetal nitride for use as a gate electrode. The first conductive layer104 can be formed by CVD. The thickness of the first conductive layer104 as deposited is in a range from about 20 nm to about 200 nm in someembodiments. In some embodiments, the thickness of the first conductivelayer 104 is reduced by a planarization operation, such aschemical-mechanical polishing (CMP) or an etch-back method. After theplanarization operation, the thickness of the first conductive layer 104is in a range from about 10 nm to about 50 nm in some embodiments. Insome embodiments, the first conductive layer 104 is polysilicon andappropriately doped with p-type dopants (e.g., boron) or n-type dopants(e.g., phosphorus). In some other embodiments, the first conductivelayer 104 is an amorphous silicon layer.

The second dielectric layer 106 includes a silicon oxide layer, asilicon nitride layer or multilayers of silicon oxide and siliconnitride in some embodiments. In one embodiment, a silicon oxide-siliconnitride-silicon oxide (ONO) layer is used as the second dielectric layer106. The thickness of the second dielectric layer is in a range fromabout 1 nm to about 100 nm in some embodiments. The second dielectriclayer 106 can be formed by CVD, physical vapor deposition (PVD) oratomic layer deposition (ALD).

The second conductive layer 108 can be a polysilicon layer formed byCVD, and the thickness of the second conductive layer 108 is in a rangefrom about 10 nm to about 100 nm, in some embodiments. In some otherembodiments, the second conductive layer 108 is polysilicon andappropriately doped with p-type dopants (e.g., boron) or n-type dopants(e.g., phosphorus).

The cap layer 110 is made of silicon oxide or silicon nitride formed byCVD, and the thickness thereof is in a range from about 100 nm to about250 nm, in some embodiments. In some embodiments, the cap layer 110includes one or more layers. For example, the cap layer 110 is acomposite structure including ONO three layers made of silicon oxide,silicon nitride, and silicon oxide in order. In some embodiments, thethickness of each of the layers of the composite structure may be thesame or different from each other.

Next, a patterning operation including lithography and etching isperformed, the cap layer 110, the second conductive layer 108 and thesecond dielectric layer 106 are patterned as shown in FIG. 1B.

After the patterning operation of the cap layer 110, the secondconductive layer 108 and the second dielectric layer 106, first spacers112 are formed on opposing sides of the patterned cap layer 110, secondconductive layer 108 and second dielectric layer 106, as shown in FIG.1C. In some embodiments, the first spacers 112 are made of one or morelayers of suitable dielectric material. One or more blanket layers ofdielectric material are formed, for example by CVD, over the entiresubstrate 100 and then anisotropic etching is performed, thereby formingthe first spacers 112. The thickness of the first spacers 112 is in arange from about 10 nm to about 50 nm in some embodiments. Although thefirst spacers 112 illustrated in FIG. 1C is single layer, it should notlimit various embodiments of the present disclosure. In some alternativeembodiments, the first spacers 112 include an ONO film having a siliconnitride layer sandwiched by two silicon oxide layers (not shown). Insome other embodiments, the first spacers 112 are made of a single layerof silicon nitride or silicon oxynitride.

After the first spacers 112 are formed, the first conductive layer 104is patterned by using dry etching operations with the first spacers 112and the patterned cap layer 110 as a mask layer, as shown in FIG. 1D. Inthe case, as shown in FIG. 1D, a width of the patterned firstpolysilicon layer 104 is greater than a width of the patterned secondconductive layer 108.

Further, second spacers 114 are formed as shown in FIG. 1E, and anerase-gate dielectric layer 118 is formed on the substrate 100 in thememory cell region MR as shown in FIG. 1F. In some embodiments, thesecond spacers 114 are made of one or more layers of dielectricmaterial. In one embodiment, the second spacers 114 are made of siliconoxide formed by CVD. The erase-gate dielectric layer 118 is made ofsilicon oxide. In some embodiments, a silicon oxide layer is formed andthen the silicon oxide layer is patterned to remove the silicon oxidelayer from an erase gate area, and then wet oxidation is performed,thereby forming the erase-gate dielectric layer 118. In someembodiments, a gate dielectric layer for select gates (e.g., word line)is also formed. In some embodiments, the first dielectric layer 102remains as the gate dielectric layer, and in certain embodiments,exposed portions of the first dielectric layer 102 to be used as thegate dielectric layer for the select gates is thinned. That is, thefirst dielectric layer 102 includes a first dielectric layer 102 a belowthe first conductive layer 104 and a first dielectric layer 102 bexposed by the first conductive layer 104. A first thickness of thefirst dielectric layer 102 a and a second thickness of the firstdielectric layer 102 b are different from each other. In someembodiments, the first thickness of the first dielectric layer 102 a aregreater than or less than the second thickness of the first dielectriclayer 102 b. In some alternatively embodiments, the first thickness ofthe first dielectric layer 102 a below the first conductive layer 104and the second thickness of the first dielectric layer 102 b exposed bythe first conductive layer 104 are the same.

By the foregoing operations, stack structures S1, S2 and S3 are formedas shown in FIG. 1F. In detail, each of the stack structures S1, S2 andS3 from bottom to top sequentially includes the first dielectric layer102, the first conductive layer 104, the second dielectric layer 106,the second conductive layer 108, and the cap layer 110. Each of thestack structures S1, S2 and S3 further includes the first spacer 112overlying sidewalls of the second dielectric layer 106, the secondconductive layer 108 and the cap layer 110, and the second spacers 114overlying the first spacer 112 and the first conductive layer 104. Insome embodiments, adjacent two stack structures S1 and S2 are to be apair of memory cells over the substrate 100 in the memory cell regionMR, and the stack structure S3 is a dummy gate structure over thesubstrate 100 in the dummy region DR. In some embodiments, the dummygate structure (e.g., the stack structure S3) and pair of memory cells(e.g., the stack structures S1 and S2) are formed simultaneously. Insome embodiments, a distance D1 between the adjacent two stackstructures S1 and S2 is in a range from about 200 nm to about 400 nm.

After the erase-gate dielectric layer 118 is formed, an ion implantationprocess is performed to form a doped region 116 in the substrate 100below the erase-gate dielectric layer 118. In some embodiments, thedoped region 116 is a common source region. The doped region 116 may bedoped with p-type dopants or n-type dopants. In some embodiments, thesubstrate 100 or the well (not shown) in the substrate 100 is an p-typesubstrate or a p-well, n-type dopants (e.g., phosphorus) may be doped inthe substrate 100 or the well to form the doped region 116. In someother embodiments, the substrate or the well in the substrate 100 is ann-type substrate or an n-well, p-type dopants (e.g., boron) may be dopedin the substrate 100 or the well to form the doped region 116.

Then, as shown in FIG. 1G, a third conductive layer 120 is formed overthe structure of FIG. 1F. That is, the third conductive layer 120 isformed to cover the stack structures S1, S2, and S3, the firstdielectric layer 102, and the erase-gate dielectric layer 118. In someembodiments, the third conductive layer 120 includes a polysiliconlayer, such as a doped polysilicon layer or an undoped polysiliconlayer. The third conductive layer 120 may be formed by the sameprocesses as the first or second conductive layers 104, 106. The thirdconductive layer 120 is conformally formed by CVD in some embodiments,as shown in FIG. 1G. That is, the third conductive layer 120 has arecess 121 between the stack structures S1 and S2 and over theerase-gate dielectric layer 118. In some embodiments, a depth D2 of therecess 121 is in a range from about 50 nm to about 100 nm. On the otherhand, a height difference H1 measured at a flat surface between a topsurface 120L of the third conductive layer 120 in the logic region LRand a topmost surface 120U of the third conductive layer 120 over thestack structure S2 is in a range from about 200 nm to about 300 nm insome embodiments. As shown in FIG. 1G, the top surface 120L of the thirdconductive layer 120 in the logic region LR is lower than the topsurface 120E of the third conductive layer 120 over the erase-gatedielectric layer 118.

Then, as shown in FIG. 1H, a planarization process is performed toremove an upper portion of the third conductive layer 120, so that topsurfaces 110U of the stack structures S1, S2, and S3 are exposed. Insome embodiments, the planarization process includes achemical-mechanical polishing (CMP) process. In some embodiments, theupper portions of the cap layer 110, the first spacers 112, and thesecond spacers 114 are also removed to ensure that the third conductivelayer 120 over the stack structures S1, S2, and S3 is completelyremoved. In the case, as shown in FIG. 1H, the top surfaces 110U of thestack structures S1, S2, and S3 and the topmost surface 120U′ of thethird conductive layer 120 around the stack structures S1, S2, and S3are coplanar. By the planarization process, an erase gate 124 is formedbetween the stack structures S1 and S2. As shown in FIG. 1H, a step 123exists between a topmost top surface 124U and a lowermost top surface124L of the erase gate 124. In some embodiment, a step height H2 of thestep 123 ranges from 1 nm to 50 nm.

It should be noted that, the stack structure S3 (e.g., the dummy gate)over the substrate 100 in the dummy region DR is able to reduce aloading effect of the CMP process. The loading effect of the CMP processoccurs due to a difference in pattern densities between the memory cellregion MR and other regions out of the memory cell region MR. That is,as shown in FIG. 2 , a ratio of a sum area of the stack structures S1,S2, and S3 projected onto the substrate 100 and an area of the substrate100 may increase to a range from 10% to 90%, for example. Therefore, inthe present embodiment of the disclosure, the loading effect of the CMPprocess of FIG. 2 may be reduced compared with only the stack structuresS1 and S2 formed over the substrate 100.

The stack structures S3 are arranged around the stack structures S1 andthe stack structures S2. In some embodiments, the stack structures S3are arranged around ends of the stack structures S1 and S2, and asidethe stack structures S1 and S2, but not limited thereto. In someembodiments, the stack structures S3 are distributed evenly. In someother embodiments, the stack structures S3 are distributed unevenly.

In some embodiments, the stack structures S3 have the same pattern. Insome other embodiments, the stack structures S3 have different patterns.The pattern or the patterns of the stack structures S3 may be the sameas or different from the patterns of the stack structures S1 or/and thestack structures S2.

In some embodiments, as shown in FIG. 2 , the stack structures S1 and S2may be strip patterns extending laterally. However, the embodiments ofthe present disclosure are not limited thereto. In some alternativelyembodiments, the stack structures S1 and S2 may be island patternsseparated from each other. Similarly, although the stack structures S3in FIG. 2 are illustrated as a plurality of island patterns separatedfrom each other, it should not limit various embodiments of the presentdisclosure. In some alternative embodiments, the stack structures S3 maybe strip patterns, mesh patterns, or a combination thereof.

Referring to FIG. 1H and FIG. 1I, a photoresist pattern 122 issubsequently formed over the structure of FIG. 1H. By using thephotoresist pattern 122 as an etching mask, the third conductive layer120 uncovered by the photoresist pattern 122 is patterned such as byetching, to remove a portion of the third conductive layer 120, therebyforming select gates 126 (e.g., word lines) outside the stack structuresS1, S2, respectively, as shown in FIG. 1I. At the same time, as shown inFIG. 1I, a logic gate 128 is also formed during the process ofpatterning the third conductive layer 120, in some embodiments. In someembodiments, the third conductive layer 120 over the substrate 100 inthe dummy region DR is removed, so as to expose the top surface of thefirst dielectric layer 102 during patterning the third conductive layer120.

Referring to FIG. 1J, the photoresist pattern 122 is removed. In someembodiments, a height of the logic gate 128 is lower than a height ofthe stack structures S1, S2, and S3. Although the number of the logicgate 128 illustrated in FIG. 1J is only one, it should not limit variousembodiments of the present disclosure. In some alternative embodiments,the number and the arrangement of the logic gate 128 may be adjustedbased on the design and the requirements of the products.

After the select gates 126 are formed, as shown in FIG. 1I and FIG. 1J,a pair of memory cells MC is formed over the substrate 100 in the memorycell region MR. In detail, the pair of memory cells MC includes adjacenttwo stack structures S1 and S2, the erase gate 124 between the stackstructures S1 and S2, and the select gates 126 over the oppositesidewalls of the stack structures S1, S2, respectively. Each of thestack structures S1 and S2 from bottom to top sequentially includes thefirst dielectric layer 102 used as the tunnel dielectric layer(hereinafter referred as the tunnel dielectric layer 102), the firstconductive layer 104 used as the floating gate (hereinafter referred asthe floating gate 104), the second dielectric layer 106 used as aninter-gate dielectric layer (hereinafter referred as the inter-gatedielectric layer 106), the second conductive layer 108 used as thecontrol gate (hereinafter referred as the control gate 108), and the caplayer 110. The pair of memory cells MC further includes the first spacer112 overlying the sidewalls of the inter-gate dielectric layer 106, thecontrol gate 108 and the cap layer 110, and the second spacers 114overlying the first spacer 112 and the floating gate 104. The firstspacer 112 and the second spacers 114 are used to electrically isolatethe floating gate 104 (or the control gate 108) from the erase gate 124,and electrically isolate the floating gate 104 (or the control gate 108)from the select gates 126.

Referring to FIG. 1I and FIG. 1J, after the photoresist pattern 122 isremoved, third spaces 130 are formed over the opposite sidewalls of thestack structure S3, the opposite sidewalls of the logic gate 128, andthe opposite sidewalls of the select gates 126. In some embodiments, thethird spaces 130 are made of one or more layers of suitable dielectricmaterial, such as silicon oxide, silicon nitride, silicon oxynitride ora combination thereof. The third spaces 130 may be formed by the sameprocesses as the first or second spacers 112, 114. Thus, details thereofare omitted here. In some embodiments, as shown in FIG. 1J, a height ofthe third spaces 130 and a height of the second spacers 114 are thesame. That is, the third spaces 130 and the second spacers 114 are atthe same level. In other words, a highest level of the third spaces 130,a highest level of the first spacers 112, and a highest level of thesecond spacers 114 are the same. In some other embodiments, a heightdifference between a topmost of the third spaces 130 and a topmost ofthe second spacers 114 is less than about 100 nm. The height differencebetween a topmost of the third spaces 130 and a topmost of the secondspacers 114 is in a range from about 30 nm to about 100 nm.

In some embodiments, as shown in FIG. 1J, a portion of the firstdielectric layer 102 not covered by the third spaces 130 is removed toexpose the top surface of the substrate 100 during forming the thirdspaces 130.

After the third spaces 130 are formed, as shown in FIG. 1K, an ionimplantation process is performed on the exposed substrate 100 in thememory cell region MR, so that doped regions 132 are formed in thesubstrate 100 in the memory cell region MR. In detail, the doped regions132 are formed in the substrate 100 at opposite sides of the pair ofmemory cells MC. In some embodiments, the doped regions 132 are referredas bit lines. The doped regions 132 may be doped with p-type dopants orn-type dopants. In some embodiments, the substrate 100 or a well in thesubstrate 100 is an p-type substrate or a p-well, and n-type dopants(e.g., phosphorus) may be doped in the substrate 100 or the well to formthe doped regions 132. In some other embodiments, the substrate 100 or awell in the substrate 100 is an n-type substrate or an n-well, andp-type dopants (e.g., boron) may be doped in the substrate 100 or thewell to form the doped regions 132. The doped regions 132 and the dopedregion 116 have the same conductive type dopants.

In some embodiments, as shown in FIG. 1K, doped regions 134 are formedin the substrate 100 in the logic region LR. In detail, the dopedregions 134 are formed in the substrate 100 at opposite sides of thelogic gate structure LG (including the gate dielectric layer 102 and thelogic gate 128 over the gate dielectric layer 102). In some embodiments,the doped regions 134 are referred as source and/or drain region (S/Dregion). The doped regions 134 may be doped with p-type dopants orn-type dopants. In some embodiments, the substrate 100 or a well in thesubstrate 100 is an p-type substrate or a p-well, n-type dopants (e.g.,phosphorus) may be doped in the substrate 100 or the well to form thedoped regions 134. In some other embodiments, the substrate 100 or awell in the substrate 100 is an n-type substrate or an n-well, andp-type dopants (e.g., boron) may be doped in the substrate 100 or thewell to form the doped regions 134.

In some embodiments, the doped regions 132 and 134 are formed at thesame time. However, the embodiments of the present disclosure are notlimited thereto. In some alternatively embodiments, the doped regions134 are formed before forming the doped regions 132, or the dopedregions 134 are formed after forming the doped regions 132. In someembodiments, the ion implantation process is performed to form the dopedregions 132 and 134, while a photoresist pattern (not shown) is coveredthe substrate 100 in the dummy region DR to prevent the dopantimplanting into the substrate 100 in the dummy region DR. In otherwords, doped region is not formed in the dummy region DR beside thestack structure S3.

Referring to FIG. 1L, after the doped regions 132 and 134 are formed, aninterlayer dielectric (ILD) layer 136 is formed over the substrate 100.In some embodiments, a ILD material layer is formed to cover the stackstructure S3, the logic gate structure LG, the pair of memory cells MCand the substrate 100, and then a planarization operation such as CMP isperformed, so that the ILD layer 136 is formed. In some embodiments, theILD layer 136 includes a dielectric material, such as silicon oxide,silicon nitride, silicon oxynitride, phosphosilicate glass (PSG),borophosphosilicate glass (BPSG), spin-on glass (SOG), fluorinatedsilica glass (FSG), carbon doped silicon oxide (e.g., SiCOH), polyimide,and/or a combination thereof. In some other embodiments, the ILD layer136 includes low-k dielectric materials. It should be noted that thelow-k dielectric materials are generally dielectric materials having adielectric constant lower than 3.9. Examples of low-k dielectricmaterials includes BLACK DIAMOND® (Applied Materials of Santa Clara,Calif.), Xerogel, Aerogel, amorphous fluorinated carbon, Parylene, BCB(bis-benzocyclobutenes), Flare, SILK® (Dow Chemical, Midland, Mich.),hydrogen silsesquioxane (HSQ) or fluorinated silicon oxide (SiOF),and/or a combination thereof. It is understood that the ILD layer 136may include one or more dielectric materials and/or one or moredielectric layers. In some embodiments, the ILD layer 136 is depositedto a suitable thickness by CVD, HDPCVD, SACVD, spin-on, or othersuitable methods.

After the ILD layer 136 is formed, a contact structure 138 is formed inthe ILD layer 136 to electrically connect to the logic gate 128, andcontact structures 140 are formed in the ILD layer 136 to electricallyconnect to the doped region 132. In some embodiments, the contactstructures 138 and 140 include a conductive material, such as metal,polysilicon, silicide, or a combination thereof. The metal may includeW, Cu, Al, or a combination thereof. In some embodiments, the contactstructures 138 and 140 are formed including following process. A masklayer (not shown) is formed over the ILD layer 136, and the mask layeris patterned by lithography and etching operations. Then, by using thepatterned mask layer as an etching mask, the ILD layer 136 is etched toform contact holes (not shown) through the ILD layer 136. The contactholes are filled with the conductive material such as W, and then, aplanarization operation such as CMP or an etch-back process isperformed, so as to remove an upper portion of the conductive materialover a top surface of the ILD layer 136, thereby forming the contactstructures 138 and 140. In some embodiments, the contact structure 138further includes a barrier layer or a glue layer such as titanium,tantalum, titanium nitride, tantalum nitride, or a combination thereofbefore forming the conductive material.

As shown in FIG. 1L, in some embodiments, before the ILD layer 136 isformed, a plurality of silicide layers 142 are formed over the dopedregions 132 and 134, the two select gates 126, the erase gate 124, andover the logic gate 128. In some embodiments, the silicide layers 142include nickel silicide (NiSi), cobalt silicide (CoSi), titaniumsilicide (TiSi), tungsten silicide (WSi), molybdenum silicide (MoSi),platinum silicide (PtSi), palladium silicide (PdSi) or a combinationthereof. In some embodiments, the silicide layers 142 are formed byperforming a self-aligned silicide (salicide) process includingfollowing steps. A metal layer (not shown) is formed to at least coverthe doped regions 132 and 134 and the logic gate 128. Thereafter, anannealing process is carried out such that the metal layer is reactedwith the doped regions 132 and 134 and the logic gate 128 in contactthereto, so as to form the silicide layers 142. The unreacted metallayer is then removed.

As shown in FIG. 1L, after the contact structures 138 and 140 areformed, a semiconductor device 10 is formed. In detail, thesemiconductor device 10 includes the substrate 100, the dummy gatestructure DG, the logic gate structure LG, and the memory cells MC inthe dummy region DR, the logic region LR, and a memory cell region MRrespectively. Each of the memory cells includes adjacent two stackstructures S1 and S2, two select gates 126, and an erase gate 124. Thetwo select gates 126 are located outside the two stack structures S1 andS2 respectively. The erase gate 124 is located between adjacent twostack structures S1 and S2. In some embodiments, as shown in FIG. 1L,the second width W2 is greater than the first width W1. In some otherembodiments, the second width W2 is greater than two times of the firstwidth W1. The first width W1 of one of the two select gates 126 is in arange from about 170 nm to about 210 nm, while the second width W2 ofthe erase gate 124 is in a range from about 290 nm to about 360 nm, forexample.

As shown in FIG. 1L, the top surfaces of the select gates 126 aresubstantially flat. In some other embodiments, the top surfaces of theselect gates 126 have bar-shaped surfaces in the section view or planesurfaces. In some other embodiments, a difference between a topmost topsurface and a lowermost top surface of one of the select gates 126 isless than 10 nm. In other words, the top surface of one of the selectgates 126 and the topmost top surface 124U of the erase gate 124 aresubstantially coplanar, in some embodiments. The step height H2 existsbetween a topmost top surface 124U and a lowermost top surface 124L ofthe erase gate 124, so that the top surface of the erase gate 124 is aU-shaped surface in the section view. In some embodiment, the stepheight H2 ranges from 1 nm to 50 nm. In other words, in someembodiments, the step height H2 between a topmost top surface 124U and alowermost top surface 124L of the erase gate 124 is greater than thedifference between the topmost top surface and the lowermost top surfaceof one of the select gates 126.

In some embodiments, since the top surface of the erase gate 124 hasU-shaped surface, the silicide layer 142 formed over the top surface ofthe erase gate 124 also has the U-shaped surface. Similarly, since thetop surfaces of the select gates 126 have bar-shaped surfaces or planesurfaces, the silicide layers 142 formed over the top surfaces of theselect gates 126 also have bar-shaped surfaces in the section view orplane surfaces.

In some embodiments, as shown in FIG. 1L, the select gates 126 areelectrically connected to an interconnect (not shown) over the ILD layer136 by the silicide layers 142. However, the dummy gate structure DG iselectrically floating. That is, the dummy gate structure DG is notelectrically connected to any outside circuits.

In accordance with some embodiments of the present disclosure, a methodof manufacturing a semiconductor device includes: providing a substratehaving a memory cell region and a logic region; forming a plurality ofstack structures on the substrate in the memory cell region; forming apolysilicon layer to cover the plurality of stack structures and thesubstrate in the logic region; performing a chemical-mechanicalpolishing (CMP) process on the polysilicon layer to expose top surfacesof the plurality of stack structures; and after performing the CMPprocess, patterning the polysilicon layer to form an erase gate betweenadjacent two stack structures and form a logic gate on the substrate inthe logic region, wherein the logic gate has a topmost top surface lowerthan a topmost top surface of the erase gate.

In accordance with alternative embodiments of the present disclosure, amethod of manufacturing a semiconductor device includes: forming aplurality of strip patterns and a plurality of island patterns on asubstrate, wherein a ratio of a sum area of the plurality of strippatterns and the plurality of island patterns projected onto thesubstrate and an area of the substrate is in a range from 10% to 90%;forming a polysilicon layer to cover the plurality of strip patterns,the plurality of island patterns, and a surface of the substrateuncovered by the plurality of strip patterns and the plurality of islandpatterns; performing a chemical-mechanical polishing (CMP) process onthe polysilicon layer to expose top surfaces of the plurality of strippatterns and the plurality of island patterns; and after performing theCMP process, patterning the polysilicon layer to form a logic gate, anerase gate, and a select gate simultaneously.

In accordance with yet alternative embodiments of the presentdisclosure, a method of manufacturing a semiconductor device includes:providing a substrate having a memory cell region, a logic region, and adummy region; forming a plurality of stack structures on the substratein the memory cell region and the dummy region; forming a polysiliconlayer to cover the plurality of stack structures and the substrate inthe logic region; and performing a chemical-mechanical polishing (CMP)process on the polysilicon layer to expose top surfaces of the pluralityof stack structures, wherein top surfaces of the plurality of stackstructures are level with a topmost surface of the polysilicon layersurrounding the plurality of stack structures after performing the CMPprocess.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A method of manufacturing a semiconductor device,comprising: providing a substrate having a memory cell region and alogic region; forming a plurality of stack structures on the substratein the memory cell region; forming a polysilicon layer to cover theplurality of stack structures and the substrate in the logic region;performing a chemical-mechanical polishing (CMP) process on thepolysilicon layer to expose top surfaces of the plurality of stackstructures; and after performing the CMP process, patterning thepolysilicon layer to form an erase gate between adjacent two stackstructures and form a logic gate on the substrate in the logic region,wherein the logic gate has a topmost top surface lower than a topmosttop surface of the erase gate.
 2. The method of claim 1, wherein afterperforming the CMP process, the method further comprises forming twoselect gates outside the adjacent two stack structures.
 3. The method ofclaim 2, wherein the erase gate, the logic gate, and the two selectgates are formed simultaneously after patterning the polysilicon layer.4. The method of claim 2, wherein a topmost top surface of the twoselect gates is higher than the topmost top surface of the logic gate.5. The method of claim 2, further comprising: forming an erase-gatedielectric layer on the substrate and a first doped region in thesubstrate between the adjacent two stack structures before forming thepolysilicon layer; and forming two second doped regions aside the twoselect gates in the substrate, wherein the first doped region and thetwo second doped regions have the same conductive type dopant.
 6. Themethod of claim 1, wherein the substrate further comprises a dummyregion, and the forming the plurality of stack structures furthercomprises forming a plurality of dummy gate structures on the substratein the dummy region to surround the plurality of stack structures. 7.The method of claim 6, wherein a ratio of a sum area of the plurality ofdummy gate structures and the plurality of stack structures projectedonto the substrate and an area of the substrate is in a range from 10%to 90%.
 8. A method of manufacturing a semiconductor device, comprising:forming a plurality of strip patterns and a plurality of island patternson a substrate, wherein a ratio of a sum area of the plurality of strippatterns and the plurality of island patterns projected onto thesubstrate and an area of the substrate is in a range from 10% to 90%;forming a polysilicon layer to cover the plurality of strip patterns,the plurality of island patterns, and a surface of the substrateuncovered by the plurality of strip patterns and the plurality of islandpatterns; performing a chemical-mechanical polishing (CMP) process onthe polysilicon layer to expose top surfaces of the plurality of strippatterns and the plurality of island patterns; and after performing theCMP process, patterning the polysilicon layer to form a logic gate, anerase gate, and a select gate simultaneously.
 9. The method of claim 8,wherein the logic gate has a topmost top surface lower than a topmosttop surface of the erase gate and a topmost top surface of the selectgate.
 10. The method of claim 8, wherein each strip pattern comprises atunnel dielectric layer, a floating gate, an inter-gate dielectriclayer, and a control gate, from bottom to top.
 11. The method of claim8, wherein the erase gate is formed between adjacent two strip patterns,and a top surface of the erase gate comprises a U-shaped surface. 12.The method of claim 8, wherein the select gate is formed outside acorresponding strip pattern, and a top surface of the select gatecomprises a flat surface.
 13. The method of claim 8, wherein theplurality of island patterns comprise a plurality of dummy gatestructures, and the plurality of dummy gate structures are electricallyfloating.
 14. A method of manufacturing a semiconductor device,comprising: providing a substrate having a memory cell region, a logicregion, and a dummy region; forming a plurality of stack structures onthe substrate in the memory cell region and the dummy region; forming apolysilicon layer to cover the plurality of stack structures and thesubstrate in the logic region; and performing a chemical-mechanicalpolishing (CMP) process on the polysilicon layer to expose top surfacesof the plurality of stack structures, wherein top surfaces of theplurality of stack structures are level with a topmost surface of thepolysilicon layer surrounding the plurality of stack structures afterperforming the CMP process.
 15. The method of claim 14, wherein afterperforming the CMP process, a top surface of the polysilicon layerbetween adjacent two stack structures on the memory cell regioncomprises a U-shaped surface.
 16. The method of claim 14, wherein afterperforming the CMP process, a top surface of the polysilicon layer onthe logic region is lower than a top surface of the polysilicon layerbetween adjacent two stack structures on the memory cell region.
 17. Themethod of claim 14, further comprising patterning the polysilicon layerto form an erase gate and a select gate on the memory cell region, andform a logic gate on the logic region.
 18. The method of claim 17,wherein the erase gate is formed between adjacent two stack structures,and the select gate is formed outside the adjacent two stack structures.19. The method of claim 17, wherein the patterning the polysilicon layerfurther comprises completely removing the polysilicon layer on thesubstrate in the dummy region.
 20. The method of claim 17, wherein thelogic gate has a topmost top surface lower than a topmost top surface ofthe erase gate and a topmost top surface of the select gate.